A modelling study of the performance of conventional diffused P/N junction and heterojunction solar cells at different temperatures

EPJ Photovoltaics

and P. Chatterjee¹  P. Roca i Cabarrocas¹  M. Labrune⁴  A. Datta²  S. Chakraborty³ 

[1] Laboratoire de Physique des Interfaces et Couches Minces, CNRS,cÉole Polytechnique,91128Palaiseau, France;Haltu High School for Girls (H.S.), Neli Nagar, Haltu,700 078Kolkata, India;Energy Research Unit, Indian Association for the Cultivation ofScience, Jadavpur,700032Kolkata, India;Total S.A., Gas &Power – R&D Division, 92400Courbevoie, France

Others  :  808637
DOI  :  doi:10.1051/epjpv/2013021

【 摘 要 】

Conventional crystalline silicon (c-Si) diffused P/N junction solar cells remain thelargest contributor to solar electricity. In order to retain a high efficiency and aswell, reduce the cost of solar electricity, Sanyo has proposed the “heterojunction withintrinsic thin layer (HIT)” solar cells where the emitter and the back surface fieldlayers are deposited using low temperature (<200 °C)plasma processes, thus reducing the thermal budget and allowing for thinner wafers. Sincesolar cells are used in extremes of climate, we felt that it would be interesting to studythe behaviour of c-Si and HIT cells, based on both P- and N-type wafers at differenttemperatures. Our results indicate that in HIT cells the amorphous doped layers form aheterojunction on the c-Si substrate, with a large valence band discontinuity that acts asa barrier for hole collection, specially at low temperatures. It is the aim of thisarticle to investigate the effect of this valence band offset on solar cell performance atdifferent ambient temperatures.

【 授权许可】

   
© Chakraborty et al., published by EDP Sciences, 2013

【 图 表 】

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