High Security FeRAM-Based EPC C1G2 UHF (860 MHz-960 MHz) Passive RFID Tag Chip

ETRI Journal

关键词: Schottky diode;    voltage multiplier;    POR;    modulator;    demodulator;    CLK;    MIM;    PIP;    MFM;    PRAM;    MRAM;    EEPROM;    FeRAM;    Passive RFID tag;   

Others  :  1185620
DOI  :  10.4218/etrij.08.0108.0338

【 摘 要 】

The metal-ferroelectric-metal (MFM) capacitor in the ferroelectric random access memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the poly-insulator-poly (PIP) capacitor and the metal-insulator-metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%. The energy transformation efficiency using the MFM scheme is higher than that of the PIP scheme in RFID chips. The radio frequency operational signal properties using circuits with MFM capacitors are almost the same as or better than with PIP, MIM, and MOS capacitors. For the default value specification requirement, the default set cell is designed with an additional dummy cell.

   

【 参考文献 】

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• [2]R. Barnett et al., "An EEPROM Programming Controller for Passive UHF RFID Transponders with Gated Clock Regulation Loop and Current Surge Control," Custom Integrated Circuits Conference, 2007, pp. 393-396.
• [3]H. Nakamoto et al., "A Passive UHF RF Identification CMOS Tag IC Using Ferroelectric RAM in 0.35-μm Technology," IEEE Journal of Solid-State Circuits, vol. 42, no. 1, 2007, pp. 101-110.
• [4]U. Karthaus et al., "Fully Integrated Passive UHF RFID Transponder IC with 16.7-μW Minimum RF Input Power," IEEE Journal of Solid-State Circuits, vol. 38, no. 10, 2003, pp. 1602-1608.