EMI protection elements on cadmium telluride thin films

Aegean International Textile and Advanced Engineering Conference 2018

Kirichenko, M.V.^1 ; Krypunov, G.S.^1 ; Khrypunov, M.G.^1 ; Zaitsev, R.V.^1 ; Drozdov, A.N.^1

National Technical University, Kharkiv Polytechnic Institute, Ukraine^1

关键词: Amplitude-time characteristics;    Cadmium telluride thin films;    Columnar structures;    High conductivity;    Interelectrodes;    Layer thickness;    Structural studies;    Switching time;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/459/1/012009/pdf
DOI  :  10.1088/1757-899X/459/1/012009

来源: IOP

【 摘 要 】

The amplitude-time characteristics of cadmium telluride thin films switching were investigated at the influence of single impulses duration 1 μs. It has been founded that with an increase of cadmium telluride layer thickness from 3 μm up to 8 μm, an increase of the operating threshold from 70 V to 105 V is es-tablished. The maximum residual sample voltage was change in the range from 12 V to 40 V, the minimum - from 5 V to 20 V. Samples switching time was no more than 2 nanoseconds; the samples interelectrode capacity does not exceed 2 pF. All test samples were operated without failure up to 20 times. Based on the results of cadmium telluride films structural studies by X-ray diffractometry and scanning electron microscopy we proposed a mechanism of cadmium telluride films with columnar structure monostable switching based on the formation of melted high-conductivity channels in cadmium tel-luride grains oriented in the [111] direction.