The Formation of Nano Compounds during Sn/Cu Wetting

2018 3rd International Conference on Insulating Materials, Material Application and Electrical Engineering

材料科学;无线电电子学;电工学

Li, Shaorong^1 ; Yang, Yao^1,2 ; Liang, Yuxin^1,2 ; Li, Bangsheng^1,2

School of Material Science and Engineering, Harbin Institute of Technology, Harbin

150001, China^1

State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin

150001, China^2

关键词: Electronic industries;    Experimental devices;    Kinetic mechanism;    Molecular dynamics calculation;    Reactive wetting;    Solid-liquid interfaces;    Ultrasonic vibration;    Vertical growth;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/452/2/022020/pdf
DOI  :  10.1088/1757-899X/452/2/022020

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

When soldering copper-based chips in electronic industry, the growth of tin whisker on Sn/Cu interface under compressive stress was caused by nano-size intermetallic compounds (IMC), Cu6Sn5. Reactive wetting process of Cu substrate by pure Sn was observed in an experimental device, and its kinetic mechanism was investigated by performing molecular dynamics calculations. When Sn/Cu wetting was assisted with ultrasonic vibrations, the vertical growth of nano-size Cu6Sn5 particles won solid-liquid interface was inhibited, so the occurrence of a new compound Cu3Sn in ultrasonic wetting which changed the morphology of interface, was beneficial to eliminate tin whisker on Sn/Cu interface.