Effect of high-speed dynamic channel angular pressing and aging on the microstructure and properties of Cu-Cr-Zr alloys

Open School-Conference of NIS Countries Ultrafine Grained and Nanostructured Materials

Khomskaya, I.V.^1 ; Zel Dovich, V.I.^1 ; Frolova, Yu N.^1 ; Kheifets, A.E.^1 ; Shorokhov, E.V.^2 ; Abdullina, D.N.^1

Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18 S. Kovalevskaya st., Ekaterinburg

620108, Russia^1

Russian Federal Nuclear Center, Zababakhin All-Russian Research Institute of Technical Physics, PO box 245, Snezhinsk

456770, Russia^2

关键词: Electrical resistances;    Functional properties;    Microstructure and properties;    Nano-crystalline structures;    Second phase precipitates;    Sliding friction;    Strength property;    Submicrocrystalline structures;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/447/1/012007/pdf
DOI  :  10.1088/1757-899X/447/1/012007

来源: IOP

【 摘 要 】

The microstructure, mechanical and functional properties, including electrical and wear resistances have been investigated for the Cu-0.09%Cr-0.08%Zr and Cu-0.14%Cr-0.04%Zr alloys subjected to high-speed dynamic channel angular pressing (DCAP) followed by annealing (aging). It was shown that DCAP led to the formation of a submicrocrystalline (SMC) structure (d = 200-400 nm) with second-phase precipitates up to 5 nm in a size. The sequence of decomposition of a copper based α solid solution, accompanied by recrystallization and precipitation of second-phase nanoparticles during annealing (aging), was determined. DCAP and aging at 400-450 °C led to a decrease in the electrical resistance of the Cu-Cr-Zr alloys from 4.2 to 2.1 μ•cm and to a drastic increase in their strength properties (σu from 197 to 542 MPa, σ0.2 from 94 to 464 MPa), while retaining reasonable ductility. It was revealed that the SMC structure processed by DCAP and annealing (aging) at 400 °C can be additionally strengthened after sliding friction tests due to the formation of a nanocrystalline structure in the surface layer.