会议论文详细信息
International Scientific and Practical Conference on Innovations in Engineering and Technology
Formation of spectral characteristic of silicon differential photoreceivers.
工业技术;自然科学
Gavrushko, V.V.^1 ; Ionov, A.S.^2 ; Kadriev, O.R.^1 ; Lastkin, V.A.^2
Novgorod State University, ul. B. St. Peterburgskaya 41, Veliky Novgorod
173003, Russia^1
Special Design Office Planeta, Veliky Novgorod
173004, Russia^2
关键词: Differential channels;    Implantation dose;    Long waves;    Photoreceivers;    Short waves;    Spectral characteristics;   
Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/441/1/012019/pdf
DOI  :  10.1088/1757-899X/441/1/012019
来源: IOP
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【 摘 要 】

The article provides information about the structure and technology of manufacturing of silicon differential photoreceivers having a selective spectral characteristic. The possibility was established of displacement of the longwave boundary of sensitivity λ 0.5 from 0.37 to 0.47μm at change of a dose of implantation of arsenic in the range of 200-5000 μC/cm2 at constant short-wave border (λ 0, 5 = 0.28μm). The effect of the implantation dose on the quantum yield of the differential channel was investigated.

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