Formation of spectral characteristic of silicon differential photoreceivers.

International Scientific and Practical Conference on Innovations in Engineering and Technology

工业技术;自然科学

Gavrushko, V.V.^1 ; Ionov, A.S.^2 ; Kadriev, O.R.^1 ; Lastkin, V.A.^2

Novgorod State University, ul. B. St. Peterburgskaya 41, Veliky Novgorod

173003, Russia^1

Special Design Office Planeta, Veliky Novgorod

173004, Russia^2

关键词: Differential channels;    Implantation dose;    Long waves;    Photoreceivers;    Short waves;    Spectral characteristics;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/441/1/012019/pdf
DOI  :  10.1088/1757-899X/441/1/012019

来源: IOP

【 摘 要 】

The article provides information about the structure and technology of manufacturing of silicon differential photoreceivers having a selective spectral characteristic. The possibility was established of displacement of the longwave boundary of sensitivity λ 0.5 from 0.37 to 0.47μm at change of a dose of implantation of arsenic in the range of 200-5000 μC/cm2 at constant short-wave border (λ 0, 5 = 0.28μm). The effect of the implantation dose on the quantum yield of the differential channel was investigated.