会议论文详细信息
2018 International Conference on Advanced Electronic Materials, Computers and Materials Engineering
Synthesis of novel Dy3+-activated LiSrBiTeO6 phosphors for white light-emitting diodes
材料科学;无线电电子学;计算机科学
Deng, Bin^1,2 ; Chen, Jun^1,2 ; Zhou, Chong-Song^1,2 ; Liu, Hui^1,2
College of ChemistryandBiology and Environmental Engineering, Xiangnan University, Chenzhou Hunan
423043, China^1
Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, Chenzhou Hunan
423043, China^2
关键词: Color coordinates;    Dopant concentrations;    Hexagonal structures;    Luminescence properties;    White light emitting diodes;    Yellow light;   
Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/439/2/022014/pdf
DOI  :  10.1088/1757-899X/439/2/022014
来源: IOP
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【 摘 要 】

Novel yellow-light-emitting LiSrBiTeO6: xDy3+ (x = 0.005, 0.01, 0.02, 0.05, 0.10, 0.20, 0.30, and 0.40) phosphors were synthesized. X-ray diffraction (XRD) results revealed that the prepared LiSrBiTeO6:Dy3+ phosphors are hexagonal structure. The luminescence properties showed that the phosphor can be effectively excited by UV light (388 nm) and exhibits bright emission centered at 484, 575, and 663 nm, attributed to the 4F9/2→6H15/2, 4F9/2→6H13/2, and 4F9/2→6H11/2 transitions of Dy3+ ions, respectively. The optimum dopant concentration of Dy3+ ions in LiSrBiTeO6:xDy3+ was around 10 mol% and the critical transfer distance of Dy3+ was calculated as 14 Å. The CIE color coordinates fall into the yellow-light region. The developed phosphor has great potential as a yellow-light-emitting phosphor for UV-light-emitting diodes.

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