A new method to extract stray inductance in IGBTs' Dynamic testing platform

2018 International Conference on Advanced Electronic Materials, Computers and Materials Engineering

材料科学;无线电电子学;计算机科学

Tang, Xinling^1 ; Pan, Yan^1 ; Zhang, Peng^1 ; Zhao, Zhibin^2

State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute of State Grid Corporation of China, Beijing

102209, China^1

Dtate Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing

102206, China^2

关键词: Capacitor voltages;    Conventional methods;    Different voltages;    Simulations and measurements;    Switching characteristics;    Testing platforms;    Turn-on transients;    Voltage overshoot;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/439/2/022025/pdf
DOI  :  10.1088/1757-899X/439/2/022025

来源: IOP

【 摘 要 】

Stray inductance in IGBTs' dynamic testing platform has great influence on switching characteristics, such as switching speed, switching loss, voltage overshoot, and so on. Conventional methods are analyzed in this paper, which cannot extract stray inductance accurately due to existence of resistance in power stage current path. A new method is proposed in this paper to extract stray inductance based on turn-off transient waveform and a following turn-on transient waveform. In this method, it is assumed that capacitor voltage and load current are constants during turn-off transient and the following turn-on transient, and then the stray inductance is extracted accurately by using gradients of both turn-off current and turn-on current at a given current value. The new method eliminates the influence of resistance in current path. To verify the proposed method, circuit simulation is carried out by using Synopsys Saber; furthermore, an IGBT dynamic testing platform is developed, stray inductance of the testing platform is extracted under different voltage levels. Simulation and measurement results prove the effectiveness of the new method. Insulated gate bipolar transistors, electronic equipment testing, inductance measurement.