Al- & Al-Ca-doped ZnO Thin Films by Sol-Gel Method for Solar Cell Application

4th International Conference on Structure, Processing and Properties of Materials

Bhowmik, S.^1 ; Raiyan, M.I.^1 ; Moniruzzaman, M.^1

Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering and Technology, Dhaka

1000, Bangladesh^1

关键词: Photoelectric property;    Photovoltaic property;    Properties of deposited films;    Sol-gel spin coating;    Solar-cell applications;    Transmittance spectra;    X ray diffractometers;    Zinc acetate dihydrate;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/438/1/012033/pdf
DOI  :  10.1088/1757-899X/438/1/012033

来源: IOP

【 摘 要 】

Zinc oxide (ZnO) thin films, due to their excellent photovoltaic properties, are gaining much attention to be used as n-type semiconductor material for modern day solar cell. The change in photoelectric properties of zinc oxide with doping is an area of much consideration. In this work, 1.17%Al, 1.17%Al-2%Ca and 1.17%Al-4%Ca doped ZnO thin films were produced on glass substrate by Sol-Gel spin coating technique. Zinc acetate dihydrate, triethanolamine and isopropanol were used for making precursor solution. For Al doped ZnO, aluminum nitrate nona hydrate was added to the precursor solution as source of Al. Aluminum nitrate nona hydrate and calcium chloride dihydrate were utilized as source of Al and Ca respectively for Al-Ca doped ZnO. The films were deposited from precursor solutions at 1300 rpm for 20 seconds. After deposition, annealing was done at 520°C for one hour. Properties of deposited films were characterized by X-ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and UV-Vis spectroscopy. From XRD spectra the theoretical grain size was measured which increased from 0.31 nm to 0.33 nm because of doping. From SEM micrograph the uniformity and homogeneity of thin film was observed. The band gap of deposited thin films was measured from absorbance spectra. The band gap decreased from 3.27 eV to 3.17 eV because of doping 4% Ca in addition to 1.17% Al. From transmittance spectra, it was found that all films were transparent with average percentage of transmittance of more than 86%.