Preliminary studies of Mn (x) Zn (2?x) FeO 4 (x = 0 dan 0.1) thick film semiconductors as an ethanol gas sensor

3rd Annual Applied Science and Engineering Conference

工业技术;自然科学

Aliah, H.^1 ; Syarif, D.G.^2 ; Iman, R.N.^1 ; Darmalaksana, W.^3 ; Setiawan, A.^4 ; Sawitri, A.^1

Department of Physics, Faculty of Science and Technology, UIN Sunan Gunung Djati Bandung, Bandung, Indonesia^1

Center for Applied Nuclear Science and Technology (PSTNT)-BATAN Bandung, Bandung, Indonesia^2

Research Centre, UIN Sunan Gunung Djati Bandung, Bandung, Indonesia^3

Department of Physics, Faculty of Mathematics and Science, Universitas Pendidikan Indonesia Bandung, Indonesia^4

关键词: Electrical resistances;    Ethanol gas sensors;    Operating temperature;    Screen printing methods;    Sensor sensitivity;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/434/1/012027/pdf
DOI  :  10.1088/1757-899X/434/1/012027

来源: IOP

【 摘 要 】

Preliminary studies about fabrication of Mn(x)Zn(2-x)FeO4 (x = 0 dan 0.1) had been done to identify the effect of adding Mn2O3 10%mol towards gas sensor sensitivity. Gas sensor ceramics that fabricated through local nature mineral-based is Yarosite mineral. The fabrication of Mn(x)Zn(2-x)FeO4 thick film semiconductor by using Screen Printing method and firing at temperature 800 °C for 2 hours. Through electrical properties test it is known that the adding of Mn2O3 materials made semiconductor thick film faster to response ethanol gases rather than without Mn2O3 materials. Thick film Mn0.1Zn1.9FeO4 has lower operating temperature and higher conductivity than Zn2FeO4 thick film. Electrical resistance test indicated that by adding Mn2O3 10%mol, it is sufficiently effective to obtain new properties of Mn0.1Zn1.9FeO4 thick film and it can be used as ethanol gas sensor.