A model of the vacuum level effect on the sensor response of vacuum sensors based on nanostructured semiconductor oxide materials

25th International Conference on Vacuum Technique and Technology

Pronin, I.A.^1 ; Yakushova, N.D.^1 ; Averin, I.A.^1 ; Karmanov, A.A.^1 ; Moshnikov, V.A.^1,2

Department of Nano-and Microelectronics, Penza State University, Penza

440026, Russia^1

Department of Micro- and Nanoelectronics, Saint-Petersburg Electrotechnical University LETI, Saint-Petersburg

197376, Russia^2

关键词: Nanostructured oxides;    Nanostructured semiconductor;    Sensitive elements;    Sensor response;    Vacuum level;    Vacuum sensors;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/387/1/012062/pdf
DOI  :  10.1088/1757-899X/387/1/012062

来源: IOP

【 摘 要 】

A mathematical model of the sensor response of vacuum sensors based on wide-band gap semiconductor nanostructured oxides, using a small number of parameters, is proposed. The results of the research can be used to develop a methodology for the synthesis of sensitive elements with a given response for a selected range of vacuum.