会议论文详细信息
2018 International Conference on Advanced Materials, Intelligent Manufacturing and Automation
Neutron radiation prediction model based on Geant4 Simulation
材料科学;机械制造;运输工程
Lei, Dongliang^1 ; Zhou, Wanting^1 ; Li, Lei^1
Research Institute of Electronic Science and Technology, UESTC, Chengdu
611731, China^1
关键词: Bulk silicon technology;    GEANT4 simulation;    Multi-bit upset;    Neutron radiations;    Sensitive volume;    Silicon materials;    Single event effects;    Single-bit;   
Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/382/4/042050/pdf
DOI  :  10.1088/1757-899X/382/4/042050
学科分类:材料科学(综合)
来源: IOP
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【 摘 要 】

As SRAM is scaled down to a smaller size, it will induce multi-bit upset(MBU) when incident neutron react with silicon material. Based on Geant4, compound sensitive volume and multi-sensitive volume model are constructed to predict single-bit upset (SEU) and MBU caused by the single event effect of neutron. The prediction of SRAM upset of 40nm bulk silicon technology is carried out with this model. The results show that the prediction results in this paper are in good agreement with the actual test results, which proves the accuracy of the model.

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