Enhanced Photo-electric Response of p-n Heterointerface on Ordered ZnO Nanowires/Polyaniline Films

4th Annual International Workshop on Materials Science and Engineering

Han, Leilei^1 ; Chen, Yan^1 ; Fan, Shan^1 ; Li, Wenhui^1 ; Meng, Chaoying^1

Department of Mechanics, Wen Hua College, Wuhan

430074, China^1

关键词: Aqueous solution methods;    Hexagonal wurtzite;    Hole-transporting materials;    Oxygen vacancy defects;    Oxygen vacancy level;    P-n heterojunctions;    Photoelectric response;    Photogenerated electrons;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/381/1/012018/pdf
DOI  :  10.1088/1757-899X/381/1/012018

来源: IOP

【 摘 要 】

In this paper, a p-n heterojunction structure of ZnO nanowies/Polyaniline (Z NWs/PANI) nanocomposites was synthesized by layer-by-layer. Since the PANI plays p-type hole-transporting material (p-HTM), it is contributed to separate the photo-generated electron-hole pairs. The Z NWs were synthesized by the sol-gel method and the aqueous solution method. Compared to the commercial ZnO particles, the as-grown Z NWs array was composed of hexagonal wurtzite nanorods which grew in preferential c-axis [0001] direction. The Z NWs have the abundant oxygen vacancy defects, which can trap more photo-generated electrons under the UV illumination or excite more trapped electrons in the oxygen vacancy levels into the conduction band under the Blue illumination. It is hoped that the present work may provide an efficient and applicable method to develop photoelectric response with excellent performance.