Fabricating SiC Nanowire by Vacuum Heating Multilayer Graphene in Silicate Refractory Tube

4th Annual International Workshop on Materials Science and Engineering

Hu, Zengrong^1 ; Li, Yue^1 ; Zhan, Yaohui^1 ; Huan, Pengcheng^1 ; Wang, Xiaonan^1 ; Chen, Changjun^1

Soochow University, Suzhou, Jiangsu

215131, China^1

关键词: Energy dispersive spectrometers;    Graphene sheets;    Heated material;    Multilayer graphene;    Refractory tubes;    Silicon carbides (SiC);    Vacuum heating;    Vacuum sintering;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/381/1/012107/pdf
DOI  :  10.1088/1757-899X/381/1/012107

来源: IOP

【 摘 要 】

One dimension silicon carbide (SiC) was synthesized by vacuum heating multilayer graphene sheets in silicate refractory tube. Scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive spectrometer (EDS) and Raman spectroscopy were used to study the microstructures and components of the vacuum heated materials. SEM images show the morphology of the synthesized SiC nanowires. XRD patterns and Raman spectra verified that graphene sheets remained and the wire like material was SiC nanowire. Therefore, vacuum sintering technology can be used to synthesize SiC nanowires.