会议论文详细信息
18th International Conference on Textures of Materials
Segregation affecting the evolution of primary recrystallization textures in a ternary Fe-Si-Sn alloy
材料科学;物理学
Mavrikakis, N.^1,2 ; Calvillo, P.R.^3 ; Saikaly, W.^3 ; Descoins, M.^1 ; Mangelinck, D.^1 ; Dumont, M.^1
Aix Marseille Université, CNRS, IM2NP UMR 7334, Marseille
13397, France^1
ArcelorMittal Maizières Research SA, Voie Romaine, BP 30320, Maizières les Metz
57283, France^2
ArcelorMittal Global R and D, Technologiepark 935, Zwijnaarde
BE-9052, Belgium^3
关键词: Electron backscatter diffraction technique;    Geometrical considerations;    Grain boundary segregation;    Misorientation distributions;    Primary recrystallization;    Recrystallized samples;    Texture evolutions;    Three-dimensional atom probe tomographies;   
Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/375/1/012016/pdf
DOI  :  10.1088/1757-899X/375/1/012016
学科分类:材料科学(综合)
来源: IOP
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【 摘 要 】

The effect of Sn addition on the primary recrystallization of cold rolled Fe-3 wt. % Si alloys is investigated. Texture evolution and misorientation distributions are analyzed on partially recrystallized samples using the electron backscatter diffraction technique (EBSD). Sn was found to affect the microstructure, throughout the thermal treatment of the materials, by refining the grains and altering the texture. In the presence of Sn, the intensity of {111} grains is reduced through all stages of recrystallization, while that of {100} and {hkl} grains is increased. The favored growth of these latter grains is most likely due to a combination of mechanisms that involve nucleation site preferences and probably the presence of high mobility CSL boundaries. Σ5 boundaries were observed to increase in frequency with Sn through all stages of recrystallization. Additionally {100} grains were found to be most frequently correlated with Σ5 interfaces, which might be due to geometrical considerations. Site-specific characterization of grain boundaries was conducted with three-dimensional atom probe tomography (3D-APT) to measure the grain boundary segregation of Sn.

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