Three-dimensional modelling of thermal stress in floating zone silicon crystal growth

8th International Scientific Colloquium on Modelling for Materials Processing

Plate, Matiss^1 ; Krauze, Armands^2 ; Virbulis, Janis^2

Siltronic AG, Hanns-Seidel-Platz 4, München

81737, Germany^1

University of Latvia, Faculty of Physics and Mathematics, Zeu 23, LV-1002, Latvia^2

关键词: Crystal surfaces;    Elastic material properties;    Floating zone method;    Intrinsic point defects;    Material anisotropy;    Silicon single crystals;    Three dimensional modelling;    Three-dimensional mathematical models;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/355/1/012005/pdf
DOI  :  10.1088/1757-899X/355/1/012005

来源: IOP

【 摘 要 】

During the growth of large diameter silicon single crystals with the industrial floating zone method, undesirable level of thermal stress in the crystal is easily reached due to the inhomogeneous expansion as the crystal cools down. Shapes of the phase boundaries, temperature field and elastic material properties determine the thermal stress distribution in the solid mono crystalline silicon during cylindrical growth. Excessive stress can lead to fracture, generation of dislocations and altered distribution of intrinsic point defects. Although appearance of ridges on the crystal surface is the decisive factor of a dislocation-free growth, the influence of these ridges on the stress field is not completely clear. Here we present the results of thermal stress analysis for 4" and 5" diameter crystals using a quasi-stationary three dimensional mathematical model including the material anisotropy and the presence of experimentally observed ridges which cannot be addressed with axis-symmetric models. The ridge has a local but relatively strong influence on thermal stress therefore its relation to the origin of fracture is hypothesized. In addition, thermal stresses at the crystal rim are found to increase for a particular position of the crystal radiation reflector.