Aspects of rf-heating and gas-phase doping of large scale silicon crystals grown by the Float Zone technique

8th International Scientific Colloquium on Modelling for Materials Processing

Zobel, F.^1 ; Mosel, F.^2 ; Sorensen, J.^2 ; Dold, P.^1

Fraunhofer CSP, Otto-Eißfeldt-Str. 12, Halle

06120, Germany^1

PVA Crystal Growing Systems GmbH, Im Westpark 10-12, Wettenberg

35435, Germany^2

关键词: Basic principles;    Float zones;    Gas phase doping;    Gasphase;    In-situ doping;    Radio frequencies;    RF heating;    Silicon crystal;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/355/1/012006/pdf
DOI  :  10.1088/1757-899X/355/1/012006

来源: IOP

【 摘 要 】

Float Zone growth of silicon crystals is known as the method for providing excellent material properties. Basic principle of this technique is the radiofrequency induction heating, main aspects of this method will be discussed in this article. In contrast to other methods, one of the advantages of the Float Zone technique is the possibility for in-situ doping via gas phase. Experimental results on this topic will be shown and discussed.