Evaluation of band gap energy and surface roughness for tin indium zinc oxide thin films by atomic force microscopy and electron spectroscopy

International Conference and Exhibition in Advanced Materials and Microscopy 2017

材料科学;物理学

Denny, Yus Rama^1 ; Firmansyah, Teguh^2 ; Isnaeni, I.^3 ; Aritonang, Sovian^4 ; Kartina, A.M.^5

Department of Physics Education, University Sultan Ageng Tirtayasa, Banten

42435, Indonesia^1

Department of Electrical Engineering, University Sultan Ageng Tirtayasa, Banten

42435, Indonesia^2

Research Center for Physics, Indonesian Institute of Science, 442 Puspiptek Serpong, South Tangerang, Banten

15314, Indonesia^3

Department of Defense Industry, Indonesian Defense University, IPSC, Sentul Bogor, Indonesia^4

Department of Agroekoteknologi, University Sultan Ageng Tirtayasa, Banten

42435, Indonesia^5

关键词: Band gap energy;    Indium zinc oxides;    Low-energy;    Primary electrons;    rf-Magnetron sputtering;    Root mean square roughness;    Surface bands;    Visible light region;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/343/1/012006/pdf
DOI  :  10.1088/1757-899X/343/1/012006

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The SnInZnO thin film was prepared at room temperature by RF magnetron sputtering. The band gap of this film was investigated by REELS and UV-Spectrometer analysis. The surface morphology and the root mean square (RMS) roughness of SnInZnO thin films measured using atomic force microscopy (AFM). By using REELS with low energy (500 eV) and high energy (1500 eV) electron beams, the surface band gap as well as and the bulk energy band gap were measured. In addition, the surface roughness was evaluated by atomic force microscopy. The result shows that the band gaps are affected by the primary electron energies. The transmittance value of 80% in the visible light region has been achieved. The optical band gap was calculated by using Tauc's relation from UV-Spectrometer analysis and compared to that of the band gap obtained by the REELS spectra.