Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer

6th International Conference on Electronic Devices, Systems and Applications 2017

无线电电子学;工业技术

Ismail, L.N.^1 ; Samsul, S.^1 ; Musa, M.Z.^1 ; Norsabrina, S.^1

Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Pulau Pinang, Seberang Perai, Pulau Pinang

13500, Malaysia^1

关键词: Current voltage;    Electrical and structural properties;    Field effects transistors;    Low temperature spin coating;    Nanocomposite dielectrics;    P-type;    Poly(3-hexylthiophene-2 ,5-diyl);   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/340/1/012005/pdf
DOI  :  10.1088/1757-899X/340/1/012005

学科分类：工业工程学

来源: IOP

【 摘 要 】

This paper report on the fabrication of p-type organic field effects transistor (OFET) using low temperature spin coating deposition technique. The p-type OFETs were fabricated using poly (3-hexylthiophene-2,5-diyl) (P3HT) and poly (methyl methacrylate):titanium dioxide (PMMA:TiO2) nanocomposite material were used as semiconductor and the gate dielectric, respectively. The electrical and structural properties of OFETs were analysed using current-voltage (I-V), atomic force microscopy (AFM) and RAMAN spectroscopy. Results from I-V show that the fabricated p-type OFET has moderate performance with threshold voltage, VTHis -3V and mobility, μ is 2.01 cm2V-1s.