Analysis of Structural & Optical Properties of Aluminium Nanoparticles decorated on SiO x Nanowires by GLAD Technique

International Conference on Advances in Materials and Manufacturing Applications 2017

Singh, Divya^1 ; Ngangbam, Chitralekha^1 ; Shougaijam, Biraj^2

Department of Electronics and Communication Engineering, National Institute of Technology, Manipur, India^1

Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, India^2

关键词: Al-nanoparticles;    Aluminum nanoparticles;    E beam evaporation;    GLAD;    Glancing angle deposition technique;    Growth techniques;    Optoelectronic applications;    SiOx;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/310/1/012002/pdf
DOI  :  10.1088/1757-899X/310/1/012002

来源: IOP

【 摘 要 】

In this paper, Glancing angle Deposition (GLAD) Technique have been employed for the growth of Al Nanoparticles (NPs) decorated SiOxNanowires (NWs) using e-beam evaporation system. The FE-SEM and HR-TEM results reveal the successful growth of Al NPs and SiOxNanowires above the buffer layer of In2O3TF. The measured length of SiOxNWs is ∼ 450 nm and the thickness of In2O3TF (buffer layer) is ∼100 nm. The EDAX analysis confirms the presence of Oxygen (O), Aluminium (Al), Silicon (Si), and Indium (In). The SAED analysis shows the polycrystalline nature of In2O3and Al which is correlated to the XRD peaks. Also, XRD result confirms the amorphous nature of SiOxNWs. The optical absorption of In2O3TF/SiOxNWs/Al NPs is found to be ∼1.3 fold compared to In2O3TF/SiOxNWs, which may be due to the Surface Plasmon Resonance (SPR) effect of Al NPs on the sample. The PL analysis also reveals the photon emission enhancement from the sample with Al NPs. Therefore, this growth technique which enhanced the optical properties may be applicable in a wide range of optoelectronic applications.