Thermal modeling of wide bandgap semiconductor devices for high frequency power converters

International Conference on Advances in Materials and Manufacturing Applications 2017

Sundar Ram, S. Sharath^1 ; Vijayakumari, A.^1

Department of Electrical and Electronics Engineering, Amrita School of Engineering, Amrita Vishwa Vidyapeetham, Amrita University, Coimbatore, India^1

关键词: Electrical components;    Exponential curves;    High frequency power converter;    Manufacturer's datum;    P-Spice simulation;    Thermal characteristics;    Transient thermal stress;    Wide-bandgap semiconductor devices;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/310/1/012133/pdf
DOI  :  10.1088/1757-899X/310/1/012133

来源: IOP

【 摘 要 】

The emergence of wide bandgap semiconductors has led to development of new generation semiconductor switches that are highly efficient and scalable. To exploit the advantages of GaNFETs in power converters, in terms of reduction in the size of heat sinks and filters, a thorough understanding of the thermal behavior of the device is essential. This paper aims to establish a thermal model for wideband gap semiconductor GaNFETs commercially available, which will enable power electronic designers to obtain the thermal characteristics of the device more effectively. The model parameters is obtained from the manufacturer's data sheet by adopting an exponential curve fitting technique and the thermal model is validated using PSPICE simulations. The model was developed based on the parametric equivalence that exists between the thermal and electrical components, such that it responds for transient thermal stresses. A suitable power profile has been generated to evaluate the GaNFET model under different power dissipation scenarios. The results were compared with a Silicon MOSFETs to further highlight the advantages of the GaN devices. The proposed modeling approach can be extended for other GaN devices and can provide a platform for the thermal study and heat sink optimization.