Stress Relaxation in Porous GaN Prepared by UV Assisted Electrochemical Etching

2nd International Conference on Advanced Materials

Al-Heuseen, K.^1 ; Alquran, M. Kh.^1

Ajloun University College, Al-Balqa Applied University, Jordan^1

关键词: As-grown;    Band edge;    Phonon energies;    Photoluminescence intensities;    Porous GaN;    Red shift;    Red-shifted;    Size and shape;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/305/1/012015/pdf
DOI  :  10.1088/1757-899X/305/1/012015

来源: IOP

【 摘 要 】

This study describes the stress relaxation in porous GaN grown on Al2O3substrates. The results indicate that the stress relaxation has taken place in the samples which increases by increasing the etching current. As compared to the as-grown GaN films, porous GaN exhibits substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge peaks associated with the relaxation of the compressive stress. The red shifted phonon energy peak (E2) in the Raman spectra of the porous GaN films confirms further such a stress relaxation. Scanning electron microscopy (SEM) demonstrates that, the current density has significant effect on the size and shape of the pores.