Picoseconds Laser-Induced Reversible Phase Change of CuSb2Te Thin Films

5th Annual International Conference on Material Science and Environmental Engineering

材料科学;生态环境科学

Li, Simian^1,2 ; Lu, Yegang^3 ; Ting, Wen^2 ; Zheng, Yibo^1

Hebei Key Laboratory of Optoelectronic Information and Geo-detection Technology, Hebei GEO University, Shijiazhuang

050031, China^1

State Key Laboratory of Optoelectronic Materials and Technology, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou

510275, China^2

Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai

201800, China^3

关键词: Crystallization threshold;    Cu content;    Laser induced;    Optical Storage;    Phase Change;    Phase change dynamics;    Picoseconds;    Reflectivity contrast;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/301/1/012038/pdf
DOI  :  10.1088/1757-899X/301/1/012038

来源: IOP

【 摘 要 】

Cu-doped Sb2Te is extensively used for phase change optical storage. The phase change dynamics in Cu-doped Sb2Te thin films by Picoseconds laser pulses were studied. The crystallization threshold and the reflectivity contrast of the Cu-Sb2Te alloy increased with the Cu content, the reflectivity contrast of about 28% was obtained on Cu-doped Sb2Te film with the Cu content of 27at.%, and the reversible phase change realized due to the ps laser pulses irradiation in strong-weak cycles.