Large-scale synthesis of Tellurium nanostructures via galvanic displacement of metals

International Nuclear Science, Technology and Engineering Conference 2017

原子能学

Kok, Kuan-Ying^1 ; Choo, Thye-Foo^1 ; Saidin, Nur Ubaidah^1 ; Che Ab Rahman, Che Zuraini^2

Malaysian Nuclear Agency, Bangi Selangor D.E. Kajang

43000, Malaysia^1

Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, UKM Bangi, Selangor D.E.

43600, Malaysia^2

关键词: Etching temperature;    Galvanic displacement;    Hierarchical structures;    Large scale synthesis;    Optical storage materials;    Piezoelectric generators;    Radiation dosimeters;    Sacrificial material;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/298/1/012015/pdf
DOI  :  10.1088/1757-899X/298/1/012015

来源: IOP

【 摘 要 】

Tellurium (Te) is an attractive semiconductor material for a wide range of applications in various functional devices including, radiation dosimeters, optical storage materials, thermoelectric or piezoelectric generators. In this work, large scale synthesis of tellurium (Te) nanostructures have been successfully carried out in different concentrations of aqueous solutions containing TeO2and NaOH, by galvanic displacements of Zn and Al which served as the sacrificial materials. Galvanic displacement process is cost-effective and it requires no template or surfactant for the synthesis of nanostructures. By varying the concentrations of TeO2and NaOH, etching temperatures and etching times, Te nanostructures of various forms of nanostructures were successfully obtained, ranging from one-dimensional needles and rod-like structures to more complex hierarchical structures. Microscopy examinations on the nanostructures obtained have shown that both the diameters and lengths of the Te nanostructures increased with increasing etching temperature and etching time.