Gamma irradiation induced method in preparation of Gd2O2S:Eu3+ phosphors: the effect of dose towards luminescent properties

International Nuclear Science, Technology and Engineering Conference 2017

原子能学

Rahim, S.^1 ; Hasim, M.H.^1 ; Ayob, M.T.M.^1 ; Rahman, I.A.^1 ; Radiman, S.^1

Nuclear Technology Research Centre, Faculty Science and Technology, Universiti Kebangsaan Malaysia, Bangi, Selangor

43600, Malaysia^1

关键词: Cetyltrimethylammonium bromide;    Field emission scanning;    Gamma irradiation;    Hexagonal phase structure;    Insoluble compounds;    Luminescence properties;    Luminescent property;    Morphology analysis;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/298/1/012017/pdf
DOI  :  10.1088/1757-899X/298/1/012017

来源: IOP

【 摘 要 】

A novel gamma irradiation induced synthesis method of Gd2O2S:Eu3+phosphors was investigated in the presence of cetyltrimethylammonium bromide (CTAB). The effect of irradiation doses (50-150kGy) on structural and morphology analysis as well as luminescence properties were characterized by X-ray diffraction (XRD), field emission scanning microscopy (FESEM) and photoluminescence spectrometer (PL). The results show that gamma radiation is potentially induced formation of Gd2O2S:Eu3+phosphors from radiation reduction and/or precipitation of insoluble compounds as the hexagonal phase structure was formed without any impurities as proven in XRD pattern. The morphologies were observed that the obtained Gd2O2S:Eu3+phosphors possess sphere structure with smooth surface at 100 kGy irradiated dose. PL spectroscopy reveals that the strongest red emission peaks is located at 626 nm under 325 nm light excitation, which corresponds to5D0→7F2transition of Eu3+ions. An optimized dose for excellent luminescent was observed at 100 kGy. The results suggested that the Gd2O2S:Eu3+phosphors may have a beneficial approach in field of imaging device or media.