Enhanced photoluminescence properties of Al doped ZnO films

2nd International Conference on New Material and Chemical Industry

材料科学;化学工业

Chen, H.X.^1 ; Ding, J.J.^1

College of Science, Xian Shiyou University, Xian, Shaanxi

710065, China^1

关键词: Al-doped zno films;    Defect concentrations;    Intensity of emission;    Oxide compounds;    Photoluminescence properties;    Radio frequency magnetron sputtering;    Visible emissions;    Zn-interstitial;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/292/1/012103/pdf
DOI  :  10.1088/1757-899X/292/1/012103

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Al doped ZnO films are fabricated by radio frequency magnetron sputtering. In general, visible emission is related to various defects in ZnO films. However, too much defects will cause light emission quench. So it is still a controversial issue to control appropriate defect concentrations. In this paper, based on our previous results, appropriate Al doping concentration is chosen to introduce more both interstitial Zn and O vacancy defects, which is responsible for main visible emission of ZnO films. A strong emission band located at 405 nm and a long tail peak is observed in the samples. As Al is doped in ZnO films, the intensity of emission peaks increases. Zn interstitial might increase with the increasing Al3+substitute because ZnO was a self-assembled oxide compound. So Zn interstitial defect concentration in Al doped ZnO films will increase greatly, which results in the intensity of emission peaks increases.