Study on the temperature field of large-sized sapphire single crystal furnace

2nd International Conference on New Material and Chemical Industry

材料科学;化学工业

Zhai, J.P.^1 ; Jiang, J.W.^2 ; Liu, K.G.^3 ; Peng, X.B.^3 ; Jian, D.L.^1 ; Li, I.L.^1

Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen

518060, China^1

College of Electronic Science and Technology, Shenzhen University, Shenzhen

518060, China^2

College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen

518060, China^3

关键词: Axial temperature gradients;    Concentration phenomena;    Diameter ratio;    Insulation system;    Radial temperature gradients;    Sapphire single crystal;    Solid-liquid surfaces;    Stress accumulation;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/292/1/012099/pdf
DOI  :  10.1088/1757-899X/292/1/012099

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In this paper, the temperature field of large-sized (120kg, 200kg and 300kg grade) sapphire single crystal furnace was simulated. By keeping the crucible diameter ratio and the insulation system unchanged, the power consumption, axial and radial temperature gradient, solid-liquid surface shape, stress distribution and melt flow were studied. The simulation results showed that with the increase of the single crystal furnace size, the power consumption increased, the temperature field insulation effect became worse, the growth stress value increased and the stress concentration phenomenon occurred. To solve these problems, the middle and bottom insulation system should be enhanced during designing the large-sized sapphire single crystal furnace. The appropriate radial and axial temperature gradient was favorable to reduce the crystal stress and prevent the occurrence of cracking. Expanding the interface between the seed and crystal was propitious to avoid the stress accumulation phenomenon.