Analysis of type IIb synthetic diamond using FTIR spectrometry

International Conference "Modern Technologies and Materials of New Generations"

Klepikov, I.V.^1,2 ; Koliadin, A.V.^2 ; Vasilev, E.A.^3

A.P. Karpinsky Russian Geological Research Institute, 74 Sredniy prospect, Saint Petersburg

199106, Russia^1

LLC New Diamond Technology, 2 Voskova st, Sestroretsk, Saint Petersburg, Russia^2

Saint-Petersburg Mining University, 2 21st line, Saint Petersburg

199106, Russia^3

关键词: FTIR spectrometry;    Growth sectors;    High pressure high temperature;    Inhomogeneities;    Internal structure;    Synthetic single crystals;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/286/1/012035/pdf
DOI  :  10.1088/1757-899X/286/1/012035

来源: IOP

【 摘 要 】

Analysis of internal structure in large IIb-type high pressure-high temperature (HPHT) synthetic single-crystal diamond are presented. The concentration of boron impurity in different growth sectors varies from 0.02 to 10.3 ppm. It is shown that in the manufacturing of synthetic diamond plates, internal inhomogeneities of the diamond should be taken into account; plates with different characteristics can be cut from one diamond, each of which can be used for its own purpose.