The thermally stimulated discharge of ion-irradiated oxide films

2017 2nd International Conference on Innovative Engineering Materials

Wang, Qiuru^1 ; Zeng, Huizhong^1 ; Zhang, Wanli^2

University of Electronic Science and Technology of China, Chengdu

610054, China^1

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu

611731, China^2

关键词: Emission spectrums;    Photoluminescence measurements;    Shallow traps;    Thermal excitation;    Thermally stimulated discharges;    Trap parameters;    Vacancy Defects;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/284/1/012029/pdf
DOI  :  10.1088/1757-899X/284/1/012029

来源: IOP

【 摘 要 】

The ion irradiation technique is utilized to modify the surface structure of amorphous insulating oxide films. While introducing defects, a number of surface charges are injected into the films and captured in the traps during ion irradiation. The variation of surface morphology and the enhancement of emission spectrum corresponding to vacancy defects are respectively verified by atomic force microscopy and photoluminescence measurements. The surface charges trapped in the shallow traps are easy to release caused by thermal excitation, and discharge is observed during heating. Based on the thermally stimulated discharge measurements, the trap parameters of oxide films, such as activation energy and relaxation time, are calculated from experimental data.