High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure

1st International Workshop on Materials Science and Mechanical Engineering

材料科学;机械制造

Kumar, D.^1 ; Tseng, T.Y.^1

Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu

30010, Taiwan^1

关键词: Conductive-bridge random access memory (cbram);    Memory performance;    Multilayer structures;    Non-volatile memory application;    Resistance ratio;    Resistive switching;    Retention ability;    Switching characteristics;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/281/1/012028/pdf
DOI  :  10.1088/1757-899X/281/1/012028

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and - 0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x103) during the test without any degradation, good retention ability (>104s) at a temperature of 120 °C with more than 102on/off resistance ratio.