Investigation of the Transverse Spread of Neodymium Ions Implanted in SOI

1st International Workshop on Materials Science and Mechanical Engineering

材料科学;机械制造

Qin, X.F.^1 ; Chen, L.^1 ; Xu, F.Y.^1

College of Science, Shandong Jianzhu University, Jinan

250101, China^1

关键词: Experiment values;    Measured results;    Monte Carlo codes;    Neodymium ions;    Range distribution;    Rutherford backscattering techniques;    Semiconductor integration;    Transverse distribution;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/281/1/012044/pdf
DOI  :  10.1088/1757-899X/281/1/012044

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

It is very important to consider the range distribution and transverse distribution of ions implanted into semiconductor materials in design and fabrication of semiconductor integration devices by ion implantation. The Nd (neodymium) ions with energy of 400 keV and dose of 2×1015ions/cm2were implanted into SOI (Silicon-on-insulator) samples at room temperature under the angles of 0°, 30° and 45°, respectively. The transverse distribution of 400 keV Nd ions implanted in SOI samples were measured by Rutherford backscattering technique. The measured results are compared with Monte Carlo code SRIM2012 predictions. It can be found that the experiment values were in good agreement with the prediction of SRIM2012 code.