Cryogenic power electronics at megawatt-scale using a new type of press-pack IGBT

International Cryogenic Materials Conference 2017

Graber, L.^1 ; Saeedifard, M.^1 ; Mauger, M.J.^1 ; Yang, Q.^1 ; Park, C.^1 ; Niebur, T.^1 ; Pamidi, S.V.^2,3 ; Steinhoff, S.^4

School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, United States^1

Department of Electrical and Computer Engineering, FAMU-FSU College of Engineering, Florida State University, Tallahassee, United States^2

Center for Advanced Power Systems, Florida State University, Tallahassee, United States^3

IXYS UK Westcode Ltd., Chippenham, United Kingdom^4

关键词: All electric ships;    Conduction loss;    Cryogenic converters;    Cryogenic power electronics;    Cryogenic temperatures;    Electrical characteristic;    Forward voltage drops;    Static and dynamic tests;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/279/1/012011/pdf
DOI  :  10.1088/1757-899X/279/1/012011

来源: IOP

【 摘 要 】

Electrical characteristics of a press-pack IGBT stack have been investigated experimentally in both static and dynamic tests at room temperature and at 77 K in an effort to identify a megawatt-scale class semiconductor that performs well electrically, thermally, and mechanically. It has been observed that the forward voltage drop and the turn-off time are both noticeably reduced at cryogenic temperatures, suggesting significant improvement in the device operating area. Furthermore, the stack was subjected to repeated thermal cycles between room temperature and 77 K without observing any degradation. A circuit simulation of a 200-kW boost converter based on the characterized press-back IGBT stack exhibited a reduction in switching and conduction losses at 77 K by 60% and 24%, respectively compared to the values at room temperature. It is expected that the type of press-pack IGBT stacks tested will be key elements to build high power dense, megawatt-scale cryogenic converters for future all-electric ships and electric airplanes.