Controllable Growth of Monolayer MoS2 and MoSe2 Crystals Using Three-temperature-zone Furnace

1st International Conference on Frontiers of Materials Synthesis and Processing

材料科学;化学

Zheng, Binjie^1 ; Chen, Yuanfu^1

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu

610054, China^1

关键词: Chemical vapor depositions (CVD);    Controllable growth;    Controllable synthesis;    Full width half maximum;    Molybdenum diselenide;    Molybdenum disulfide;    Optoelectronic properties;    Transition metal dichalcogenides;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/274/1/012085/pdf
DOI  :  10.1088/1757-899X/274/1/012085

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Monolayer molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2) have attracted a great attention for their exceptional electronic and optoelectronic properties among the two dimensional family. However, controllable synthesis of monolayer crystals with high quality needs to be improved urgently. Here we demonstrate a chemical vapor deposition (CVD) growth of monolayer MoS2 and MoSe2 crystals using threeerature-zone furnace. Systematical study of the effects of growth pressure, temperature and time on the thickness, morphology and grain size of crystals shows the good controllability. The photoluminescence (PL) characterizations indicate that the as-grown monolayer MoS2 and MoSe2 crystals possess excellent optical qualities with very small full-width-half-maximum (FWHM) of 96 me V and 57 me V, respectively. It is comparable to that of exfoliated monolayers and reveals their high crystal quality. It is promising that our strategy should be applicable for the growth of other transition metal dichalcogenides (TMDs) monolayer crystals.