Influence of Incident Angle of Electron on Transmittance and Tunneling Current in Heterostructures with Bias Voltage by Considering Spin Polarization Effect

2nd Materials Research Society of Indonesia Meeting

Noor, Fatimah A.^1 ; Nabila, Ezra^1 ; Sustini, Euis^1 ; Khairurrijal^1

Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung

40132, Indonesia^1

关键词: Analytical expressions;    Incident angles;    Potential barriers;    Spin state;    Tunneling current;    Z-directions;    Zinc-blende;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/214/1/012037/pdf
DOI  :  10.1088/1757-899X/214/1/012037

来源: IOP

【 摘 要 】

In this work, an analytical expression is presented of electron transmittance through a potential barrier by applying a bias voltage with spin polarization consideration. A zincblende material was employed for the barrier in the heterostructure to calculate the transmittance, which depends on the spin states indicated as "up" and "down". The obtained transmittance was then employed to compute the tunneling current. It was shown that the transmittances are different for each state and asymmetric with incident angle. The polarization is positive for a positive incident angle of and negative for a negative incident angle. It was also shown that the tunneling current did not reach its highest value at an incident angle of 0° (z-direction).