Crystal Structure, Optical, and Electrical Properties of SnSe and SnS Semiconductor Thin Films Prepared by Vacuum Evaporation Techniques for Solar Cell Applications

4th International Conference on Advanced Materials Science and Technology

Ariswan^1 ; Sutrisno, H.^2 ; Prasetyawati, R.^1

Department of Physics Education, Faculty of Mathematics and Natural Sciences, Yogyakarta State University, Kampus Karangmalang, Jl. Colombo 1, Yogyakarta

55281, Indonesia^1

Department of Chemistry Education, Faculty of Mathematics and Natural Sciences, Yogyakarta State University, Kampus Karangmalang, Jl. Colombo 1, Yogyakarta

55281, Indonesia^2

关键词: Chemical compositions;    Diffuse reflectance;    Energy dispersive of X-ray analysis;    Orthorhombic crystal system;    Semiconductor thin films;    Solar-cell applications;    Ultra violet-visible;    Vacuum evaporation technique;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/202/1/012042/pdf
DOI  :  10.1088/1757-899X/202/1/012042

来源: IOP

【 摘 要 】

Thin films of SnSe and SnS semiconductors had been prepared by vacuum evaporation techniques. All prepared samples were characterized on their structure, optical, and electrical properties in order to know their application in technology. The crystal structure of SnSe and SnS was determined by X-Ray Diffraction (XRD) instrument. The morphology and chemical composition were obtained by Scanning Electron Microscopy (SEM) coupled with Energy Dispersive of X-Ray Analysis (EDAX). The optical property such as band gap was determined by DR-UV-Vis (Diffuse Reflectance-Ultra Violet-Visible) spectroscopy, while the electrical properties were determined by measuring the conductivity by four probes method. The characterization results indicated that both SnSe and SnS thin films were polycrystalline. SnSe crystallized in an orthorhombic crystal system with the lattice parameters of a = 11.47 Å, b = 4.152 Å and c = 4.439 Å, while SnS had an orthorhombic crystal system with lattice parameters of a = 4.317 Å, b = 11.647 Å and c = 3.981 Å. Band gaps (Eg) of SnSe and SnS were 1.63 eV and 1.35 eV, respectively. Chemical compositions of both thin films were non-stoichiometric. Molar ratio of Sn : S was close to ideal which was 1 : 0.96, while molar ratio of Sn : S was 1 : 0.84. The surface morphology described the arrangement of the grains on the surface of the thin film with sizes ranging from 0.2 to 0.5 microns. Color similarity on the surface of the SEM images proved a homogenous thin layer.