Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience

7th International Conference on Key Engineering Materials

材料科学;工业技术

Sahari, S.K.^1 ; Abdul Halim, N.A.^1 ; Muhammad, K.^1 ; Sawawi, M.^1 ; Hamzah, A.A.^2 ; Yeop Majlis, B.^2

Faculty of Engineering, Universiti Malaysia Sarawak, Sarawak, Kota Samarahan

94300, Malaysia^1

Institute of Microelectronics Engineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia^2

关键词: Chemical bonding structures;    Desorption rate;    Dry oxygen;    Ge surfaces;    Orientation dependence;    Substrate orientation;    Thermal oxidation;    Thermally oxidized;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/201/1/012024/pdf
DOI  :  10.1088/1757-899X/201/1/012024

来源: IOP

【 摘 要 】

The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured by spectroscopic ellipsometry and the chemical bonding structures were characterized by using x-ray photoelectron spectroscopy (XPS). No orientation dependence was observed for the oxidation at temperature of 375°C while for oxidation at 490 and 550°C, Ge oxidation and GeO desorption rate of (100) orientation yield higher rate than (111). The larger atomic space of (100) orientation explains the higher oxidation and desorption rate at Ge surface.