Carbon monoxide gas sensing using zinc oxide deposited by successive ionic layer adhesion and reaction

7th International Conference on Key Engineering Materials

材料科学;工业技术

Florido, E.A.^1 ; Dagaas, N.A.C.^1

Institute of Mathematical Sciences and Physics, University of the Philippines Los Banos, Laguna

4031, Philippines^1

关键词: Average sensitivities;    Concentration ranges;    Current-voltage characterization;    Gas concentration;    Glass substrates;    Parts per millions;    Successive ionic layer adsorption and reactions;    Voltage response;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/201/1/012043/pdf
DOI  :  10.1088/1757-899X/201/1/012043

来源: IOP

【 摘 要 】

This study was aimed to determine the carbon monoxide (CO) gas sensing capability of zinc oxide (ZnO) film fabricated by successive ionic layer adsorption and reaction (SILAR) on glass substrate. Films consisting of a mixture of flower-like clusters of ZnO nanorods and nanowires were observed using scanning electron microscopy (SEM). Current-voltage characterization of the samples showed an average resistivity of 13.0 Ω-m. Carbon monoxide gas was synthesized by mixing the required amount of formic acid and excess sulfuric acid to produce CO gas concentrations of 100, 200, 300, 400, and 500 parts per million (ppm) v/v with five trials for each concentration. Two sets of data were obtained. One set consisted of the voltage response of the single film sensor while the other set were obtained from the double film sensor. The voltage response for the single film sensor and the double film sensor showed an average sensitivity of 0.0038 volts per ppm and 0.0024 volts per ppm, respectively. The concentration the single film can detect with a 2V output is 526 ppm while the double film sensor can detect up to 833 ppm with a 2V output. This shows that using the double film sensor is advantageous compared to single film sensor, because of its higher concentration range due to the larger surface area for the gas to interact. Moreover, the measured average resistance for the single film sensor was 10 MΩ while for the double film sensor the average resistance was 5 MΩ.