Differential Mode Conducted EMI Prediction in Three Phase SiC Inverters

2017 2nd Asia Conference on Power and Electrical Engineering

能源学;电工学

Duan, Zhuolin^1,2,3,4 ; Fan, Tao^2,3,4 ; Zhang, Dong^2,3,4 ; Wen, Xuhui^2,3,4

University of Chinese Academy of Sciences, Beijing, China^1

Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China^2

Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China^3

Collaborative Innovation Center of Electric Vehicles in Beijing, Beijing, China^4

关键词: Conducted EMI;    Design phase;    Differential mode;    Frequency domain approaches;    Noise source;    Power Mosfets;    Silicon carbides (SiC);    Three-phase inverter;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/199/1/012126/pdf
DOI  :  10.1088/1757-899X/199/1/012126

来源: IOP

【 摘 要 】

With the application of Silicon carbide (SiC) power MOSFETs in three phase inverters, higher level electromagnetic interference (EMI) produced. Thus, it is more urgent to predict EMI level in the design phase. This paper describes a frequency-domain approach to predict differential mode(DM) EMI of three phase SiC inverters. Both noise path and DM noise source are modeled. The calculated result is compared with experimental result and they agree well with each other. It is indicated that the proposed method with accurate noise and path modeling is an effective method for DM prediction of the system.