Annealing treatment of a-Si:H films deposited by PECVD and their properties

3rd International Conference on Functional Materials Science 2016

Cahyono, Yoyok^1 ; Darul Muttaqin, Fuad^1 ; Maslakah, Umi^1 ; Darminto^1

Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Sepuluh Nopember (ITS), Sukolilo ITS Campus, Surabaya

60111, Indonesia^1

关键词: Annealed films;    Annealing process;    Annealing treatments;    As-deposited films;    Energy bandgaps;    Glass substrates;    Plasma enhanced chemical vapor depositions (PE CVD);    UV-vis spectroscopy;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/196/1/012038/pdf
DOI  :  10.1088/1757-899X/196/1/012038

来源: IOP

【 摘 要 】

The hydrogenated amorphour silicon (a-Si:H) films have been grown on the glass substrates by plasma enhanced chemical vapor deposition (PE-CVD) employing silane (SiH4) with hydrogen (H2) dilution. The as - deposited films were then annealed at various temperatures of 200, 300 and 400°C for 30 minutes. Annealing process at 300°C was also performed for 60 and 90 minutes. Examinations using X-ray diffractometry, infrared and UV-Vis spectroscopy demonstrated that the annealed films show an increasing crystalinity of 3.26 - 6.80% and reduced dangling bond content down to more than one order of magnitude (from 2.3 × 1019to 1.2 × 1018cm-3). Meanwhile, the energy bandgap and Urbach energy of the films are around 1.71 - 1.75 eV and 0.21 - 0.27 eV respectively.