Using the Semiconductors Materials of InSb-ZnTe System in Sensors for Gas Control

5th International Conference: Modern Technologies For Non-Destructive Testing

材料科学;物理学

Shubenkova, E.G.^1

Omsk State Technical University, Omsk, Russia^1

关键词: Dielectric substrates;    Gas control;    Microbalances;    Pressure ranges;    Raman spectroscopic;    Temperature range;    Thin film semiconductors;    X-ray diffraction techniques;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/189/1/012009/pdf
DOI  :  10.1088/1757-899X/189/1/012009

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The samples of thin film semiconductor compounds InSb, ZnTe and solid solutions based on them were obtained by vapor deposition of components on a dielectric substrate in a vacuum, followed by annealing and their surface properties in CO, O2and NH3gas atmospheres were investigated. Identification of the samples was carried out by X-ray diffraction techniques. In the temperature range 253 ÷ 403 K and a pressure range of 1÷12 Pa the gas adsorption was measured by piezoelectric microbalance technique. In order to establish the basic regularities of processes flowing on samples surface in addition to the electrophisical were used Infrared and Raman spectroscopic measurements. The resulting addiction "surface property - composition" is extreme and have allowed to determine solid solution InSb0,95-ZnTe0,05as the most sensitive to the presence of ammonia, selective and this sample exhibits a negligible oxidation of surface.