ZnO wide bandgap semiconductors preparation for optoelectronic devices

International Conference on Advanced Materials for Better Future 2016

Ramelan, A.H.^1 ; Wahyuningsih, S.^2 ; Munawaroh, H.^2 ; Narayan, R.^3

Electronic Materials and Energy Research Group, Faculty of Mathematics and Natural Sciences, Sebelas Maret University, Jl. Ir. Sutami No. 36A, Surakarta, Indonesia^1

Inorganic Materials Research Group, Faculty of Mathematics and Natural Sciences, Sebelas Maret University, Jl. Ir. Sutami No. 36A, Surakarta, Indonesia^2

Biomedical Engineering Joint Department, University of North Carolina, North Carolina State University, United States^3

关键词: Annealed temperature;    Annealing temperatures;    Anti reflective coatings;    Nanoparticle layers;    Optical transmittance spectrum;    Reflectance values;    Structural and optical properties;    UV-vis spectroscopy;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/176/1/012008/pdf
DOI  :  10.1088/1757-899X/176/1/012008

来源: IOP

【 摘 要 】

ZnO nanoparticles were successfully synthesized by sol-gel method. According to unique structural and optical properties of ZnO semiconductor material, there are many potential important applications based on that material, including as an anti-reflection coating (ARC) in solar cells. Antireflective coatings (ARC) made of ZnO on top to improve the optical properties of the coating. TiO2layer have been coated on a ZnO nanoparticle layer. ZnO nanoparticle was characterized by X-ray diffraction (XRD), Scanning electron Microscopy (SEM) and UV-Vis spectroscopy. ZnO annealed at a temperature of 600 °C have the greatest crystalinity and crystal size than that at a temperature of 400 °C and 500 °C. SEM images of ZnO shown agglomeration and grain size increases with increasing annealed temperature. While, the optical properties of ZnO increase with increasing annealed temperature. The optical transmittance spectra of the ZnO are shown that the increasing annealing temperature had effectively improved the optical transmittance of the films. While, reflectance (%R) properties shows that, the higher annealing temperature of ZnO preparations can decrease of %R value of ZnO thin layer. The difference properties of ZnO are due to differences of light scattering resulting from the crystal size effect. The ZnO prepared by annealed at 600 °C gain a good performance of the lowest reflectance value and highest size crystal. By the addition of ARC ZnO 600 °C we have been capable improve cell performance so that that cells achieve an efficiency of 0.27%.