Irradiation temperature effects on the induced point defects in Ge-doped optical fibers.

2016 International Conference on Defects in Insulating Materials

Alessi, A.^1 ; Reghioua, I.^1 ; Girard, S.^1 ; Agnello, S.^2 ; Di Francesca, D.^1 ; Martin-Samos, L.^3 ; Marcandella, C.^4 ; Richard, N.^4 ; Cannas, M.^2 ; Boukenter, A.^1 ; Ouerdane, Y.^1

Univ-Lyon, Laboratoire H. Curien, UMR CNRS 5516, Université Jean Monnet, 18 rue du Pr. Benoit Lauras, Saint-Etienne

42000, France^1

Dipartimento di Fisica e Chimica, Universita di Palermo, Palermo

I-90123, Italy^2

CEA, DAM, DIF, Arpajon

F91297, France^3

Materials Research Laboratory, University of Nova Gorica, Vipavska 11c, Ajdovscina

5270, Slovenia^4

关键词: Combined effect;    Dose rate;    Electron paramagnetic resonances (EPR);    EPR signals;    Experimental investigations;    Irradiation temperature;    Nonbridging oxygen hole center;    Red emissions;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/169/1/012008/pdf
DOI  :  10.1088/1757-899X/169/1/012008

来源: IOP

【 摘 要 】

We present an experimental investigation on the combined effects of temperature and irradiation on Ge-doped optical fibers. Our samples were X-ray (10 keV) irradiated up to 5 kGy with a dose rate of 50 Gy(SiO2)/s changing the irradiation temperature in the range 233-573 K. After irradiation we performed electron paramagnetic resonance (EPR) and confocal microscopy luminescence (CML) measurements. The recorded data prove the generation of different Ge related paramagnetic point defects and of a red emission, different from that of the Ge/Si Non-Bridging Oxygen Hole center. Furthermore, by comparing the behaviour of the EPR signal of the Ge(1) as a function of the irradiation temperature with the one of the red emission we can exclude that this emission is originated by the Ge(1).