The Investigation of Ion Implantation as a Technique for Manufacturing GaAs Magneto-Sensitive Detectors

7th International Conference Radiation-thermal Effects and Processes in Inorganic Materials

材料科学;物理学

Karlova, G.F.^1 ; Avdochenko, B.I.^2

NIIPP, JSC, Tomsk, Russia^1

TUSUR, Tomsk, Russia^2

关键词: Active Layer;    Hall voltage;    Hall-effect sensors;    Magnetic density;    Magneto sensitives;    Physical parameters;    Semi-insulating GaAs;    Silicon ion implantation;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/168/1/012026/pdf
DOI  :  10.1088/1757-899X/168/1/012026

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

This paper studies thin active layers of n-niand n+-n-ni-types produced by means of silicon ion implantation into a semi-insulating GaAs substrate. The results of these structures' physical parameters investigation are presented. Based on the structures the Hall-effect sensors are designed that have the linearity of Hall voltage dependency on magnetic density UH(B) of at least 1% in the range of up to B