The wettability between etching solutions and the surface of multicrystalline silicon wafer during metal-assisted chemical etching process

1st International Conference on New Material and Chemical Industry

材料科学;化学工业

Niu, Y.C.^1,2 ; Liu, Z.^2 ; Liu, X.J.^2 ; Gao, Y.^2 ; Lin, W.L.^2 ; Liu, H.T.^3 ; Jiang, Y.S.^3 ; Ren, X.K.^3

Co-innovation Center for Green Building, Shandong Jianzhu University, Jinan

250101, China^1

School of Materials Science and Engineering, Shandong Jianzhu University, Jinan

250101, China^2

Shandong Linuo Solar Power Holdings Co. Ltd, Jinan, Shandong

250103, China^3

关键词: Etching reaction;    Etching solutions;    HF solutions;    Mc-si wafers;    Metal-assisted chemical etching;    Multicrystalline silicon (mc-Si);    Multicrystalline silicon wafers;    Polished wafers;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/167/1/012015/pdf
DOI  :  10.1088/1757-899X/167/1/012015

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In order to investigate the wettability of multicrystalline silicon (mc-Si) with the etching solutions during metal-assisted chemical etching process, different surface structures were fabricated on the p-type multi-wire slurry sawn mc-Si wafers, such as as-cut wafers, polished wafers, and wafers etched in different solutions. The contact angles of different etching solutions on the surfaces of the wafers were measured. It was noted that all contact angles of etching solutions were smaller than the corresponding ones of deionized water, but the contact angles of different etching solutions were quite different. Among the contact angles of the etching solutions of AgNO3-HF, H2O2-HF, TMAH and HNO3-HF, the contact angle of TMAH solution was much larger than the others and that of HNO3-HF solution was much smaller. It is suggested that the larger contact angle may lead to an unevenly etching of silicon wafer due to the long retention of big bubbles on the wafers in the etching reaction, which should be paid attention to and overcome.