Fabrication and characterization of non-volatile transistor memory based on polypeptide as gate dielectric

1st International Conference on New Material and Chemical Industry

材料科学;化学工业

Liang, Lijuan^1 ; Li, Lianfang^1 ; Wei, Xianfu^1 ; Huang, Beiqing^1 ; Wei, Yen^2

Beijing Institute of Graphic Communication, Beijing

102600, China^1

Department of Chemistry, Tsinghua University, Beijing

100084, China^2

关键词: Amide groups;    Dielectric layer;    Fabrication and characterizations;    Memory functions;    Memory transistors;    Memory window;    Organic thin film transistors;    Polypeptide structures;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/167/1/012062/pdf
DOI  :  10.1088/1757-899X/167/1/012062

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The organic thin film transistor (OTFT) fabricated with the polypeptide as a dielectric layer shows memory function. In order to investigate the effect of polypeptide structure on the performance of non-volatile transistor memory, the Fourier-transform IR (FT- IR) and Circular Dichiroism (CD) spectral of PMLG film has been applied, respectively. In conclusion, the memory transistor device fabricated with polypeptide as the ferroelectric exhibit promising behavior such as a large memory window, and the dipole moment of the amide group was considered as the main source of the memory function.