Influence of chip temperature on the hydrogen sensitivity of MISFET-based sensors

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Podlepetsky, B.I.^1 ; Kovalenko, A.V.^2 ; Nikiforova, M.Y.^1

National Research Nuclear University, MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow

115409, Russia^1

Induko Ltd., Seslavinskaia str. 32/2, Moscow, Russia^2

关键词: Chip temperature;    Heater resistors;    Hydrogen concentration;    Hydrogen sensitivity;    Junction temperatures;    Sensing elements;    Silicon chip;    Temperature sensitivity;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012007/pdf
DOI  :  10.1088/1757-899X/151/1/012007

来源: IOP

【 摘 要 】

The chip temperature influence on the hydrogen sensitivity of the metal-insulator- semiconductor field-effect transistor (MISFET) with structure Pd-Ta2O5-SiO2-Si was investigated. MISFET sensing element was integrated on silicon chip together with (p-n)- junction temperature sensor and heater-resistor. There were measured the hydrogen responses of the MISFET threshold voltage for room and higher chip temperatures. The threshold voltage VTas a function of hydrogen concentration C was determined for different temperatures T. The models of hydrogen and temperature sensitivities based on the experimental dependencies of VT(C, T) are presented in this work.