Radiation hardness improvement of analog front-end microelectronic devices for particle accelerator

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Miroshnichenko, A.G.^1 ; Rodin, A.S.^1 ; Bakerenkov, A.S.^1 ; Felitsyn, V.A.^1

National Research Nuclear University, MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Analog front end;    Circuit solution;    Current mirrors;    Current transmission;    Micro-electronic devices;    Radiation degradation;    Radiation hardness;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012026/pdf
DOI  :  10.1088/1757-899X/151/1/012026

来源: IOP

【 摘 要 】

Series of schematic techniques for increasing radiation hardness of the current mirrors is developed. These techniques can be used for the design of analog front-end microelectronic devices based on the operational amplifiers. The circuit simulation of radiation degradation of current transmission coefficients was performed for various circuit solutions in LTSpice software.