Conversion model of radiation-induced interface-trap buildup and the some examples of its application

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Pershenkov, V.S.^1 ; Sogoyan, A.V.^1 ; Telets, V.A.^1

National Research Nuclear University, MEPhI(Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Conversion model;    Enhanced low-dose-rate sensitivity;    Forbidden gaps;    Interface traps;    ITS applications;    Physical model;    Radiation-induced;    Radiation-induced interface traps;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012001/pdf
DOI  :  10.1088/1757-899X/151/1/012001

来源: IOP

【 摘 要 】

It is supposed that the rechargeable radiation-induced positive centers in the oxide must have energy levels within the Si forbidden gap. These assumptions served as the basis for the physical model of the interface-trap build-up and enhanced low dose rate sensitivity (ELDRS) in bipolar devices. As examples of using the proposed conversion model is considered for bipolar devices space application.