The comparison of radiation hardness of heterojunction SiGe and conventional silicon bipolar transistors

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Bakerenkov, A.S.^1 ; Felitsyn, V.A.^1 ; Rodin, A.S.^1

National Research Nuclear University, MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Depletion region;    Electrical parameter;    Emitter-base junctions;    Radiation degradation;    Radiation hardness;    Silicon bipolar transistors;    Silicon devices;    X ray radiation;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012013/pdf
DOI  :  10.1088/1757-899X/151/1/012013

来源: IOP

【 摘 要 】

The results of the X-ray radiation impact on heterojunction SiGe and conventional silicon bipolar transistors are presented. Oxide thickness over the emitter-base junction depletion region determines the radiation hardness of the bipolar transistors. In this article, the estimation of the rate of radiation degradation of electrical parameters for conventional silicon devices and SiGe-transistors is performed.