An approach to organic field-effect transistor above-threshold drains current compact modeling that provides monotonic decrease of the output conductance with drain bias increasing

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Turin, V.O.^1 ; Rakhmatov, B.A.^1 ; Kim, C.H.^2 ; Iniguez, B.^3

Orel State University after Ivan Turgenev, Naugorskoe shosse 29, Orel

302040, Russia^1

Gwangju Institute of Science and Technology, Gwangju

61005, Korea, Republic of^2

Rovira i Virgili University, Tarragona

43840, Spain^3

关键词: Compact model;    Compact MOSFET models;    Drain bias;    Linear regime;    Minimum value;    Monotonic decrease;    Output conductance;    Saturation regime;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012044/pdf
DOI  :  10.1088/1757-899X/151/1/012044

来源: IOP

【 摘 要 】

For compact modeling of the organic field-effect transistor above-threshold drain current, we suggest using an approach that was recently proposed for the improved compact MOSFET model with the correct accounting of the nonzero output conductance in the saturation regime. This approach ensures a monotonic decrease of transistor output conductance from its maximum value in the linear regime to the minimum value in the saturation regime.